FDS3672
Typical Characteristics
T
A
= 25°C unless otherwise noted
1.4
V
GS
= V
DS
, I
D
= 250µA
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.10
I
D
= 250µA
1.05
1.0
1.00
0.8
0.95
0.6
0.4
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
0.90
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
5000
C
ISS
=
C
GS
+ C
GD
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 50V
8
1000
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
6
C
RSS
=
C
GD
100
4
2
V
GS
= 0V, f = 1MHz
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 7.5A
I
D
= 4A
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
25
30
0
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
