FDS3672
March 2003
FDS3672
N-Channel PowerTrench
®
MOSFET
100V, 7.5A, 22mΩ
Features
• r
DS(ON)
= 19mΩ (Typ.), V
GS
= 10V, I
D
= 7.5A
• Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
Formerly developmental type 82763
• Electronic Valve Train Systems
Branding Dash
5
5
4
3
2
1
6
7
1
2
3
4
8
SO-8
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Parameter
Ratings
100
±20
7.5
4.8
Figure 4
416
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
C
Operating and Storage Temperature
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
50
85
25
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS3672
Device
FDS3672
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
