Typical Characteristics TA = 25°C unless otherwise noted
300
100
30
10µs
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
DD
)
AV
AS
DSS
If R ≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100µs
10
1
10
o
1ms
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
10ms
LIMITED BY r
DS(ON)
100ms
0.1
0.01
SINGLE PULSE
T
T
= MAX RATED
J
o
STARTING T = 150 C
J
o
= 25 C
C
1s
1
0.01
0.1
1
10
100
0.1
1.0
10.0
100
300
V
, DRAIN TO SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
DS
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
30
30
PULSE DURATION = 80µs
V
= 10V
GS
V
= 6V
GS
DUTY CYCLE = 0.5% MAX
V
= 5V
GS
V
= 15V
DD
20
10
0
20
10
0
o
T
o
= 150 C
J
V
= 4.5V
GS
T
= 25 C
J
o
T
= 25 C
A
o
T
= -55 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
24
22
20
18
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 6V
GS
V
= 10V
GS
V
= 10V, I = 7.5A
D
GS
0
2
4
6
8
-80
-40
0
40
80
120
160
o
I , DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
D
J
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
