Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
102
102
101
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
150oC
25oC
100
-55oC
∝
Notes :
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
1. VDS = 40V
2. 250レs Pulse Test
10-1
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.14
0.12
0.10
102
101
100
VGS = 10V
0.08
150∩
25∩
0.06
VGS = 20V
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
∝ Note : T = 25
0.04
J
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
4000
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 40V
VDS = 100V
VDS = 160V
10
8
Coss
C
iss
6
2000
4
∝ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
∝ Note : ID = 39A
0
10
0
-1
100
101
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP39N20 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
