Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP39N20
FDP39N20
TO-220
-
-
50
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
200
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
0.2
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 19.5A
VDS = 40V, ID = 19.5A
3.0
--
--
5.0
0.066
--
V
Ω
S
Static Drain-Source
On-Resistance
0.056
28.5
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
1640
400
57
2130
520
85
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 100V, ID = 39A
RG = 25Ω
--
--
--
--
--
--
--
30
160
150
150
38
70
330
310
310
49
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 160V, ID = 39A
VGS = 10V
nC
nC
nC
Qgs
Qgd
11
--
16.5
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
39
156
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 39A
--
V
VGS = 0V, IS = 39A
152
1.1
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.85mH, I = 39A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 39A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP39N20 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
