FDN5618P
Typical Characteristics
10
I
D
= -1.25A
8
-40V
6
V
DS
= -20V
-30V
700
600
500
400
300
200
f = 1MHz
V
GS
= 0 V
C
ISS
4
2
100
0
0
2
4
6
8
10
0
2
C
OSS
C
RSS
0
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
20
Figure 8. Capacitance Characteristics.
-I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
10ms
100ms
DC
10s
1s
1ms
15
SINGLE PULSE
R
θ
JA
= 270°C/W
T
A
= 25°C
1
10
0.1
0.01
V
GS
=-10V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
5
0.001
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 270 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.1
0.05
0.02
0.01
0.01
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
0.001
0.0001
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN5618P Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
