Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–60
V
V
GS = 0 V, ID = –250 µA
Breakdown Voltage Temperature
–58
∆BVDSS
===∆TJ
IDSS
IGSSF
IGSSR
ID = –250 µA,Referenced to 25°C
mV/°C
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –48 V, VGS = 0 V
–1
100
–100
µA
nA
nA
VGS = 20V,
VGS = –20 V
VDS = 0 V
VDS = 0 V
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–1
–5
–1.6
4
–3
V
V
DS = VGS, ID = –250 µA
Gate Threshold Voltage
∆VGS(th)
ID = –250 µA,Referenced to 25°C
mV/°C
Temperature Coefficient
===∆TJ
Ω
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
GS = –4.5 V,
ID = –1.25 A
ID = –1.0 A
0.148 0.170
0.185 0.230
0.245 0.315
V
VGS = –10 V, ID = –3 A TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –1.25 A
A
S
4.3
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
430
52
19
pF
pF
pF
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6.5
8
16.5
4
8.6
1.5
1.3
13
16
30
8
13.8
ns
ns
ns
VDD = –30 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –30 V,
ID = –1.25 A,
V
GS = –10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = –0.42
(Note 2)
–0.7
VSD
Voltage
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
2
0.02 in pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0
FDN5618P Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
