Typical Characteristics
2000
1000
500
5
I D = -2A
VDS= -5V
4
-10V
-15V
C
iss
3
2
1
0
200
100
50
C
oss
f = 1 MHz
V
= 0 V
GS
C
rss
0.1
0.2
0.5
1
2
5
10
20
0
2
4
6
8
10
-V , DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
G
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
30
10
SINGLE PULSE
R
= 270° C/W
qJA
T
= 25°C
3
1
A
0.3
0.1
V
= -4.5V
GS
SINGLE PULSE
R
= 270°C/W
qJA
T
= 25°C
A
0.03
0.01
0
0.001
0.01
0.1
1
10
100
0.1
0.2
0.5
1
2
5
10
20
50
SINGLE PULSE TIME (SEC)
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.2
0.2
R
JA (t) = r(t) * R JA
q
q
0.1
R
= 270 °C/W
JA
q
0.1
0.05
0.05
0.02
P(pk)
0.01
0.02
t
1
Single Pulse
0.01
t
2
0.005
T
J
- T = P * R
(t)
qJA
A
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDN340P Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
