Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
VGS = 0 V, ID = –250 mA
BVDSS
Drain–Source Breakdown Voltage
–20
V
DBVDSS
DT
J
Breakdown Voltage Temperature
Coefficient
ID = –250 mA,Referenced to 25°C
mV/°C
mA
–15
VDS = –16 V, VGS = 0 V
–1
–10
100
–100
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 8 V,
VGS = –8 V
VDS = 0 V
VDS = 0 V
nA
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VDS = VGS , ID = –250 mA
–0.4
–0.9
2.7
–1.5
V
DVGS(th)
DT
J
ID = –250 mA,Referenced to 25°C
mV/°C
VGS = –4.5 V, ID = –2 A
RDS(on)
Static Drain–Source
On–Resistance
0.052 0.07
0.075 0.12
0.078 0.11
0.21
W
TJ=125°C
VGS= –2.5 V,
VGS= –1.8 V,
VGS = –4.5 V,
VDS = –4.5 V,
ID = –1.7A,
ID = –1.2 A,
VDS = –5 V
ID = –2 A
ID(on)
gFS
On–State Drain Current
–5
A
S
Forward Transconductance
8
Dynamic Characteristics
C
Input Capacitance
600
175
80
pF
pF
pF
iss
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
9
12
18
50
42
11
ns
ns
VDD = –5 V,
VGS = –4.5 V, RGEN = 6 W
ID = –0.5 A,
31
26
8
ns
ns
Qg
nC
nC
nC
VDS = –10V,
VGS = –4.5 V
ID = –2 A,
Qgs
Qgd
1.3
2.2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –0.42 A (Note )
–0.7
Voltage
Notes:
1.
R
qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. qJC is guaranteed by design while Rq CAis determined by the user's board design.
R
a. 250°C/W when mounted on a
0.02in pad of 2 oz copper
b. 270°C/W when mounted on a
2
.001 in pad of 2 oz copper
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDN340P Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
