FDN340P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -3.5A
4
CAPACITANCE (pF)
-15V
3
V
DS
= -5V
-10V
1000
C
ISS
800
f = 1 MHz
V
GS
= 0 V
600
2
400
C
OSS
200
C
RSS
0
5
10
15
20
1
0
0
1
2
3
4
5
6
7
8
9
Q
g
, GATE CHARGE (nC)
0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
50
Figure 8 Capacitance Characteristics.
.
-I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
POWER (W)
100
µs
1ms
10ms
100ms
1s
40
SINGLE PULSE
R
θJA
= 270° C/W
T
A
= 25°C
30
1
V
GS
= -10V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
DC
20
0.1
10
10
100
0
0.001
0.01
-V
D S
, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
SINGLE PULSE TIME (SEC)
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270 °C/W
t
1
t
2
T
J
- T
A
= P *R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN340P Rev E1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
