FDN340P
September 200
February 2007
FDN340P
Si e P-ChannelLogi LevelPower ench
®
MOSFET
ngl
,
c
,
Tr
Gener Descrpton
al
i i
Ths P-Ch n el Logi Lev MOSFET i prod c
i
an
c
el
s
u ed
u ig Farc i Semion u tor a v n ed Power Tren h
sn
i hld
c dc
dac
c
proc s th t h s been es illy talored to mii z
es a a
peca
i
nmie
th on tate ress
e
-s
itanc and y mai n low gate
e
et
ntai
c
harge f s
or uperi s tc ng perf
or wi hi
ormanc
e.
Thes devc are well s ted f portable elec
e
ies
ui or
tronis
c
a c ti s
pplia on :load s tc ng and power management,
wi hi
batteryc
hargi crc ts and DC/ c erson.
ng i ui ,
DC onv i
Feat es
ur
•
–2A, V
20
R
DS(
= 70 mΩ @ V
GS
= –4 V
.5
ON)
R
DS(
= 1 0 mΩ @ V
GS
= –2.5 V
1
ON)
•
Low gate c
harge ( nC ty c .
7.2
pial)
•
Hihperf
g
ormanc trenc tec
e
h hnology f ex
or tremely
low R
DS(
.
ON)
•
Hi power v i ofndus Standard SOT-23
gh
erson i
try
pa k g Id tia pi-ou to SOT-23 wi 30%
c a e. en c l n t
th
hi
gher power handli c pabity
ng a
li .
Absol e Maxi um Ratngs
ut
m
i
Sym bol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
Dran
i-Sourc Voltage
e
Ga
te-Sourc Voltage
e
Dran Cu
i
rren
t
– Con n ou
tiu s
– Pu ed
ls
Par et
am er
Power Dispa on f Sig Opera on
s i ti or n le
ti
Opera n a d Stora e Ju c on Tempera re Ra g
tig n
g
n ti
tu
ne
Ther al
m Char erstcs
act i i
R
θJA
R
θJ
C
Th
erma Ress n e,Ju c on
l
ita c
n ti -to-Ambi t
en
Th
erma Ress n e, n ti -to-Ca e
l
ita c Ju c on
s
(
Note 1 )
a
(
Note 1
)
Package Mar ng and Or i I or aton
ki
derng nf m i
Devi M ar ng
ce
ki
30
4
De i e
vc
FDN3 0P
4
ReelSi e
z
7’
’
Tape wi h
dt
8mm
Quantt
iy
3
000 u i
nts
©2007
Fai hi Semionduc Corporati
rc ld
c
tor
on
¢
%#
&$"
! ©¥£¨©§¥£
¦ ¤
G
S
T
A
=25
o
C u les oth s n
n s erwie oted
¡
(
Note 1 )
a
(
Note 1 )
a
(
Note 1
b)
D
Ratngs
i
–20
±8
–2
–1
0
0.5
0.4
6
–55 to +1
50
Unis
t
V
V
A
W
°C
250
75
°C/
W
°C/
W
FDN340P Rev E1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
