FDD6612A/FDU6612A
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 9.5A
V
DS
= 10V
8
CAPACITANCE (pF)
20V
1000
f = 1 MHz
V
GS
= 0 V
800
C
iss
600
6
15V
4
400
C
oss
200
2
C
rss
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
12
14
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
100
100µs
1ms
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
o
R
θJA
= 96 C/W
T
A
= 25 C
o
Figure 8. Capacitance Characteristics
50
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
40
SINGLE PULSE
o
R
θJA
= 96 C/W
T
A
= 25
o
C
I
D
, DRAIN CURRENT (A)
10
30
1
20
0.1
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6612A/FDU6612A Rev. E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
