FDD6612A/FDU6612A
Typical Characteristics
60
4.5V
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
5.0V
V
GS
= 3.5V
50
I
D
, DRAIN CURRENT (A)
6.0V
40
1.8
1.6
4.0V
4.0V
30
1.4
4.5V
5.0V
6.0V
20
3.5V
1.2
10
3.0V
0
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
1
10V
0.8
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.06
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 9.5A
V
GS
= 10V
I
D
= 5 A
R
DS(ON)
, ON-RESISTANCE (OHM)
0.05
1.6
1.4
0.04
1.2
0.03
1
T
A
= 125
o
C
0.8
0.02
T
A
= 25
o
C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0.01
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
withTemperature
60
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
50
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125
o
C
25
o
C
-55
o
C
40
1
30
0.1
20
0.01
T
A
= 125
o
C
10
25
o
C
-55
o
C
0.001
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
5.5
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6612A/FDU6612A Rev. E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
