FDD6670AS
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
= 15 V, I
D
=14A
Min Typ Max
245
14
Units
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
V
GS
= 0 V, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125°C
V
GS
=
±20
V, V
DS
= 0 V
30
29
500
6.5
±100
V
mV/°C
µA
mA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 13.8 A
I
D
= 11.7 A
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 13.8A, T
J
= 125°C
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 5 V
I
D
= 13.8 A
1
1.8
–3.3
6.8
8.3
9.3
3
V
mV/°C
8.0
10.4
11.6
mΩ
I
D(on)
g
FS
50
52
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1580
440
170
1.8
pF
pF
pF
Ω
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
10
12
28
20
20
22
45
36
27
29
42
23
40
22
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
15
16
26
13
Total Gate Charge at V
GS
=10V
Total Gate Charge at V
GS
=5V
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
I
D
= 13.8 A,
29
16
4.6
5.5
Drain–Source Diode Characteristics
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/µs
(Note 2)
(Note 2)
0.46
0.59
20
15
0.7
V
ns
nC
(Note 3)
FDD6670AS Rev A (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
