FDD6670AS
May 2005
FDD6670AS
General Description
30V N-Channel PowerTrench
®
SyncFET
™
Features
•
76 A, 30 V
R
DS(ON)
max= 8.0 mΩ @ V
GS
= 10 V
R
DS(ON)
max= 10.4 mΩ @ V
GS
= 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (29nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
.
The FDD6670AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDD6670AS
R
DS(ON)
includes a patented combination of a MOSFET
monolithically integrated with a schottky diode. The
performance of the FDD6670AS as the low-side switch
in a synchronous rectifier is indistinguishable from the
performance of the FDD6670A in parallel with a
Schottky diode.
Applications
•
DC/DC converter
•
Low side notebook
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Units
V
V
A
W
76
100
70
3.2
1.3
–55 to +150
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD6670AS
FDD6670AS
Device
FDD6670AS
FDD6670AS_NL
(Note 4)
Reel Size
13’’
13’’
Tape width
16mm
16mm
Quantity
2500 units
2500 units
FDD6670AS Rev A(X)
©2005
Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
