FDD6670A
Typical Characteristics
100
3
V
GS
=10V
4.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
3.5V
4.0V
4.5V
6.0V
10V
V
GS
= 3.0V
80
I
D
, DRAIN CURRENT (A)
6.0V
60
4.5V
3.5V
40
20
3.0V
0
0
0.5
1
1.5
2
V
D S
, DRAIN-SOURCE VOLTAGE (V)
2.5
0.8
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.02
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 66A
V
GS
= 10V
1.4
I
D
= 33A
0.0175
0.015
o
1.2
0.0125
T
A
= 125 C
1
0.01
o
0.8
0.0075
T
A
= 25 C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
withTemperature
90
V
DS
= 5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
80
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
25 C
o
100
10
1
0.1
0.01
0.001
T
A
= 125 C
o
T
A
=125 C
-55 C
o
o
25
C
o
-55 C
o
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6670A Rev. E1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
