FDD6670A
July 2005
FDD6670A
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS ( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
Features
•
66 A, 30 V
R
DS(ON)
= 8 mΩ @ V
GS
= 10 V
R
DS(ON)
= 10 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast Switching
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
D
G
S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
66
15
100
63
3.2
1.3
–55 to +175
Units
V
V
A
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
°C/W
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.4
40
96
Package Marking and Ordering Information
Device Marking
FDD6670A
Device
FDD6670A
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2005
Fairchild Semiconductor Corp.
FDD6670A Rev E1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
