FDD6670A
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 66A
8
2400
f = 1MHz
V
GS
= 0 V
2000
V
DS
= 10V
CAPACITANCE (pF)
6
15V
4
20V
1600
C
iss
1200
800
C
oss
2
400
C
rss
0
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
30
35
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics
100
100
I
D
, DRAIN CURRENT (A)
100µs
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 96 C/W
T
A
= 25 C
o
80
SINGLE PULSE
R
θJA
= 96°C/W
T
A
= 25°C
10
60
1
40
0.1
20
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.01
0.1
1
10
t
1
, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θ
JA
= 96 °C/W
P(pk)
0.0
0.1
0.1
0.05
0.02
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6670A Rev. E1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
