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FDD6670A_NL 参数 Datasheet PDF下载

FDD6670A_NL图片预览
型号: FDD6670A_NL
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 15A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3]
分类和应用: 开关脉冲晶体管
文件页数/大小: 6 页 / 106 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD6670A
Electrical Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ Max Units
2.3
0.74
28
18
1.2
A
V
ns
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
I
F
= 15 A, dI
F
/dt = 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θJA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
D
R
DS(ON)
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6670A Rev. E1(W)