FDC640P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -4.5A
4
CAPACITANCE (pF)
-15V
3
V
DS
= -5V
-10V
1200
1000
C
ISS
800
600
400
C
OSS
200
C
RSS
0
0
2
4
6
8
10
12
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
f = 1MHz
V
GS
= 0 V
2
1
0
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
100µs
1ms
10ms
100ms
1s
1
DC
0.1
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25 C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
5
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
4
3
10s
2
1
0
0.1
1
10
t
1
, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 156°C/W
P(pk)
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDC640P Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
