FDC640P
January 2001
FDC640P
P-Channel 2.5V PowerTrench
Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Features
•
–4.5 A, –20 V
R
DS(ON)
= 0.053
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.080
Ω
@ V
GS
= –2.5 V
•
Rugged gate rating (±12V)
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
Battery management
•
Load switch
•
Battery protection
D
D
S
1
2
G
6
5
4
SuperSOT
TM
-6
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±12
(Note 1a)
Units
V
V
A
W
°C
–4.5
–20
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.640
Device
FDC640P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor International
FDC640P Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
