FDC638P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -4.5A
4
V
DS
= -5V
-10V
-15V
1500
C
ISS
f = 1 MHz
V
GS
= 0 V
1200
CAPACITANCE (pF)
3
900
2
600
C
OSS
300
1
0
0
3
6
Q
g
, GATE CHARGE (nC)
9
12
0
0
5
C
RSS
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
10ms
100ms
1s
1
DC
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 156
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
10s
1ms
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
R
θJA
= 156°C/W
T
A
= 25°C
30
20
0.1
10
0
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) + R
θJA
o
R
θ
JA
= 156 C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R (t)
θJA
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDC638P Rev F (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
