FDC638P
Typical Characteristics
20
V
GS
= -4.5V
-3.0V
-I
D
, DRAIN CURRENT (A)
15
-2.0V
10
-2.5V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
V
GS
= -2.5V
1.2
-3.0V
-3.5V
-4.0V
-4.5V
5
1
0
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.8
0
5
10
-I
D
, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.6
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -4.5A
V
GS
= -4.5V
1.4
I
D
= -2.2A
0.12
1.2
0.09
T
A
= 125
o
C
0.06
T
A
= 25
o
C
0.03
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
15
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
12
-I
D
, DRAIN CURRENT (A)
125
o
C
9
T
A
= -55
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
1
T
A
= 125
o
C
0.1
0.01
6
25
o
C
3
-55
o
C
0.001
0
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC638P Rev F (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
