Typical Electrical And Thermal Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
2000
I
D
= -3.5A
4
V
DS
= -5V
-10V
CAPACITANCE (pF)
1200
800
600
Ciss
3
-15V
Coss
200
2
1
80
f = 1 MHz
V
GS
= 0 V
0
2
4
6
8
10
Crss
0
Q
g
, GATE CHARGE (nC)
30
0.1
0.2
0.5
1
2
5
10
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
20
10
-I
D
, DRAIN CURRENT (A)
5
RD
S(O
N)
LIM
IT
5
100
1m
s
10
ms
us
4
POWER (W)
1
0.3
0.1
0.03
0.01
0.1
10
1s
DC
0m
3
SINGLE PULSE
R
θ
JA
=See note 1b
T
A
= 25°C
s
2
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= See Note 1b
A
T
A
= 25°C
0.2
0.5
-V
DS
1
1
2
5
10
20
40
0
0.01
0.1
1
10
100
300
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
D = 0.5
0.2
0.1
0.05
0.2
0.1
P(pk)
0.05
0.02
0.01
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= See Note 1b
t
1
t
2
0.02
0.01
0.0001
T
J
- T
A
= P * R JA(t)
θ
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
0.001
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC634P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
