ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25 C
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55
o
C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25
o
C
V
GS
= -4.5 V, I
D
= -3.5 A
T
J
= 125 C
V
GS
= -2.5 V, I
D
= -3.1 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 78
o
C/W when mounted on a 1 in
2
pad of 2oz Cu in FR-4 board.
b. 156
o
C/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
o
o
-20
-29
-1
-10
100
-100
V
mV /
o
C
µA
µA
nA
nA
∆
BV
DSS
/
∆
T
J
I
DSS
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
Static Drain-Source On-Resistance
-0.4
-0.6
2.1
0.07
0.099
0.093
-10
6.5
0.08
0.13
0.11
A
S
-1
V
mV /
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
Ω
On-State Drain Current
Forward Transconductance
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -3.5 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
665
270
70
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -5 V, I
D
= -3.5 A,
V
GS
= -4.5 V
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
8
24
50
29
9.5
1.3
2.2
16
38
80
45
13
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-1.3
-0.75
-0.6
-1.2
-1
T
J
= 125
o
C
A
V
FDC634P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
