FDC6331L
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
IN
I
Load
I
FL
I
RL
Vin Breakdown Voltage
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
(Note 2)
V
ON/OFF
= 0 V, I
D
= –250
µA
V
IN
= 6.4 V,
V
ON/OFF
= 0 V
V
ON/OFF
= 0 V, V
IN
= 8 V
V
ON/OFF
= 0 V, V
IN
= –8 V
V
IN
= V
ON/OFF
, I
D
= –250
µA
V
IN
= 4.5 V,
I
D
= –2.8A
V
IN
= 2.5 V,
I
D
= –2.5 A
V
IN
= 1.8 V,
I
D
= –2.0 A
V
IN
= 4.5 V,
I
D
= 0.4A
V
IN
= 2.7 V,
I
D
= 0.2 A
8
–1
–100
100
V
µA
nA
nA
On Characteristics
V
ON/OFF (th)
R
DS(on)
Gate Threshold Voltage
Static Drain–Source
On–Resistance (Q2)
Static Drain–Source
On–Resistance (Q1)
0.4
R
DS(on)
0.9
34
45
64
3.1
3.8
1.5
55
70
100
4
5
V
mΩ
Ω
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
ON/OFF
= 0 V, I
S
= –0.6 A
(Note 2)
–0.6
–1.2
A
V
Notes:
1. R
θJ
A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guar anteed by design while R
θJ
A
is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC6331L Load Switch Application Circuit
IN
R1
Q2
C1
OUT
Q1
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
FDC6331L Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
