FDC6331L
August 2001
FDC6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P
-Channel
power MOSFET (Q2) in one tiny SuperSOT
T M
-6
package.
Applications
•
Load switch
•
Power management
Features
•
–2.8 A, –8 V. R
DS(ON)
= 55 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 70 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 100 mΩ @ V
GS
= –1.8 V
•
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
•
High performance trench technology for extremely
low R
DS(ON)
D2
S1
D1
Vin,R1
ON/OFF
Q2
Equivalent Circuit
3
2
Q1
4
5
6
Vout,C1
IN
Vout,C1
R2
+
V
–
DROP
OUT
G2
SuperSOT
Pin 1
TM
-6
S2
G1
R1,C1
1
See Application Circuit
ON/OFF
SuperSOT™-6
Absolute Maximum Ratings
Symbol
V
IN
V
ON/OFF
I
Load
P
D
T
J
, T
STG
T
A
=25
o
C unless otherwise noted
Parameter
Maximum Input Voltage
High level ON/OFF voltage range
Load Current
– Continuous
– Pulsed
Maximum Power Dissipation
(Note 1)
(Note 1)
Ratings
±
8
–0.5 to 8
–2.8
–9
0.7
–55 to +150
Units
V
V
A
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
180
60
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.331
Device
FDC6331L
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDC6331L Rev C(W)