FDP6670AL/FDB6670AL
Typical Characteristics
100
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
6.0V
75
3.5V
4.0V
1.8
V
GS
= 3.5V
1.6
4.5V
1.4
4.0V
1.2
4.5V
5.0V
6.0V
1
10V
50
25
3.0V
0
0
0.5
1
1.5
2
0.8
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.021
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 80A
V
GS
=10V
I
D
= 40A
0.017
1.4
1.2
0.013
T
A
= 125
o
C
0.009
T
A
= 25
o
C
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
1
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
100
V
DS
= 10V
I
S
, REVERSE DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
80
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1000
V
GS
= 0V
100
T
A
= 125
o
C
25
o
C
1
-55
o
C
0.1
10
60
40
T
A
= 125
o
C
25 C
o
20
-55
o
C
0
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AL/FDB6670AL Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
