FDP6670AL/FDB6670AL
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
DD
= 15 V,
I
D
= 80 A
Min Typ
Max
114
80
Units
mJ
A
Drain-Source Avalanche Ratings
(Note 1)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS
= 0 V,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
30
24
1
±
100
V
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 40 A
V
GS
= 4.5 V,
I
D
= 37 A
V
GS
= 10 V, I
D
= 40 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10V,
I
D
= 40 A
1
1.9
–5
5.2
6.5
7.2
3
V
mV/°C
6.5
8.5
9.7
mΩ
A
I
D(on)
g
FS
80
115
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
2440
580
250
pF
pF
pF
Ω
V
GS
= 15 mV,
f = 1.0 MHz
1.4
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
13
13
42
15
23
23
68
27
33
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 40 A,
24
7
9
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 40 A
(Note 1)
80
0.9
34
24
1.3
A
V
nS
nC
I
F
= 40 A,
d
iF
/d
t
= 100 A/µs
FDP6670AL/FDB6670AL Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
