FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
1.1
R
DS(ON)
, (Normalized)
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.5
2.0
2.0
1.5
1.0
1.5
1.0
1.0
0.5
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
0.5
0.0
-100
-50
0
50
100
o
* Notes :
1. V
GS
= 10 V
2. I
D
= 11 A
150
* Notes :
1. V
GS
= 10 V
2. I
D
= 5.5 A
200
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
T
J
,
0
Junction Temperature [ C]
50
100
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
o
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
10
2
10
µ
s
20
I
D
, Drain Current [A]
10
1
Operation in This Area
is Limited by R
DS(on)
1 ms
10 ms
DC 100 ms
I
D
, Drain Current [A]
10
3
100
µ
s
15
10
10
0
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
5
10
-1
10
0
10
1
10
2
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
(t), Thermal Response
D = 0 .5
10
-1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
* N o te s :
t
2
o
θ
JC
10
-2
1 . Z
θ
JC
( t) = 0 .4 4 C /W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
( t)
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
FDA20N50 / FDA20N50_F109 Rev. B1
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FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
