FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
Figure 2. Transfer Characteristics
2
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
150 C
1
o
10
25 C
o
-55 C
o
10
0
* Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25 C
o
* Notes :
1. V
DS
= 40V
2. 250
µ
s Pulse Test
0
10
-1
10
0
10
1
10
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.8
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
0.6
V
GS
= 10V
0.4
I
DR
, Reverse Drain Current [A]
10
1
150 C
o
25 C
o
V
GS
= 20V
0.2
* Note : T
J
= 25 C
o
*Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
0
0.0
0
15
30
45
60
75
90
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
5000
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
V
DS
= 100V
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 250V
V
DS
= 400V
C
oss
Capacitances [pF]
4000
8
C
iss
3000
6
2000
* Note :
1. V
GS
= 0 V
4
1000
C
rss
2. f = 1 MHz
2
* Note : I
D
= 20A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3
FDA20N50 / FDA20N50_F109 Rev. B1
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