FDA20N50F N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
Figure 8. Maximum Safe Operating Area
200
100
1.1
I
D
, Drain Current [A]
100
µ
s
30
µ
s
10
Operation in This Area
is Limited by R
DS(on)
1ms
10ms
DC
1.0
1
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 250
µ
A
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.8
-100
0.1
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
1
10
100
V
DS
, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature
25
20
I
D
, Drain Current [A]
15
10
5
0
25
50
75
100
125
o
T
C
, Case Temperature
[
C
]
150
Figure 10. Transient Thermal Response Curve
1
Thermal Response
[
Z
θ
JC
]
0.5
0.1
0.2
0.1
0.05
P
DM
t
1
t
2
o
0.01
0.02
0.01
Single pulse
*Notes:
1. Z
θ
JC
(t) = 0.44 C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
1E-3
-5
10
10
-4
10
10
Rectangular Pulse Duration [sec]
-3
-2
10
-1
10
0
FDA20N50F Rev. A
4
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