FDA20N50F N-Channel MOSFET
October 2007
FDA20N50F
N-Channel MOSFET
500V, 22A, 0.26Ω
Features
• R
DS(on)
= 0.22Ω ( Typ.) @ V
GS
= 10V, I
D
= 11A
• Low gate charge ( Typ. 50nC )
• Low C
rss
( Typ. 27pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
UniFET
TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-3PN
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
500
±30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
22
13
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
88
1110
22
39
4.5
388
3.1
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Min.
-
0.24
-
Max.
0.44
-
40
o
Units
C/W
©2007 Fairchild Semiconductor Corporation
FDA20N50F Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
