BU406/406H/408
Typical Characteristics
5
I
B
= 2
00m
A
I
B
=
mA
180
60mA
I
B
= 1
1000
I
C
[A], COLLECTOR CURRENT
4
mA
I
B
= 140
A
= 120m
I
B
V
CE
= 5V
h
FE
, DC CURRENT GAIN
10
0m A
I
B
= 10
mA
I
B
= 80
I
B
= 60
mA
mA
100
3
I
B
= 40
2
I
B
= 20mA
1
10
0
0
1
2
3
4
5
6
7
8
9
1
1
10
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat)[V], V
BE
(sat)[V]SATURATION VOLTAGE
10000
1000
I
C
= 10 I
B
f = 1MHz
1000
V
BE
(sat)
C
ob
[pF], CAPACITANCE
100
100
10
V
CE
(sat)
10
1
10
100
1000
10000
1
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
70
I
C
[A], COLLECTOR CURRENT
P
D
[W], POWER DISSIPATIOAN
I
C
Max. (Pulsed)
10
60
I
C
Max. (Continuous)
50
n
io
at
ip
ss
Di
s
1m
40
s
0m
10
ited
m
Li
s
m
10
30
1
20
V
CE
MAX.
d
ite
im
bL
S/
10
0
0
25
50
o
0.1
1
10
100
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
