BU406/406H/408
BU406/406H/408
High Voltage Switching
• Use In Horizontal Deflection Output Stage
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
400
200
6
7
10
4
60
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CES
Parameter
Collector Cut-off Current
Test Condition
V
CE
= 400V, V
BE
= 0
V
CE
= 250V, V
BE
= 0
V
CE
= 250V, V
BE
= 0 @ T
C
=150°C
V
BE
= 6V, I
C
= 0
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.8A
I
C
= 6A, I
B
= 1.2A
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.5A
I
C
= 6A, I
B
= 1.2A
V
CE
= 10V, I
C
= 0.5A
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.8A
I
C
= 6A, I
B
= 1.2A
10
0.75
0.4
0.4
Min.
Max.
5
100
1
1
1
1
1
1.2
1.2
1.5
Units
mA
µA
mA
mA
V
V
V
V
V
V
MHz
µs
µs
µs
I
EBO
V
CE
(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Base-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Current Gain Bandwidth Product
Turn OFF Time
: BU406
: BU406H
: BU408
V
BE
(sat)
f
T
t
OFF
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
