Typical Electrical Characteristics
-1
3
V
GS
= -10V
I
D
, DRAIN-SOURCE CURRENT (A)
-0.8
-8.0 -6.0
V
GS
= -3V
DRAIN-SOURCE ON-RESISTANCE
-5.0
-4.5
R
DS(on)
, NORMALIZED
2 .5
-3.5
-4 .0
-0.6
-4.0
2
-4.5
-5.0
-0.4
-3.5
1 .5
-6 .0
-8 .0
-1 0
-0.2
-3.0
-2.5
0
-1
-2
-3
-4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-5
-6
1
0 .5
-0.2
I
D
-0.4
-0.6
, DRA IN CURRENT (A)
-0.8
-1
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
1.6
3
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
1.4
DRAIN-SOURCE ON-RESISTANCE
I
D
= -0.13A
V
GS
= -10V
R
DS(on)
, NORMALIZED
V
GS
= -10V
2.5
1.2
2
T = 125°C
J
1
1.5
25°C
1
0.8
-55°C
0.5
-0.2
-0.4
-0.6
I
D
, DRAIN CURRENT (A)
-0.8
-1
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Drain Current and Temperature
-1
1.1
125°C
-0 .8
I
D
, DRAIN CURRENT (A)
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= -10V
T
J
= -55°C
V
DS
= V
GS
I
D
= -1m A
25°C
1.05
-0 .6
1
-0 .4
0.95
-0 .2
0.9
0
-2
-4
-6
V
GS
, GATE TO SOURCE VOLTAGE (V)
-8
0.85
-5 0
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation
with Temperature
BSS84 Rev. C1 / BSS110. Rev. A2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
