BSS84
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
100
I
D
= -0.10A
V
DS
= -8V
-25V
-30V
f = 1 MHz
V
GS
= 0 V
80
CAPACITANCE (pF)
C
ISS
4
3
60
2
40
1
20
C
OSS
C
RSS
0
0
0.2
0.4
0.6
0.8
1
0
Q
g
, GATE CHARGE (nC)
0
10
20
30
40
50
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10ms
0.1
1s
DC
0.01
V
GS
= -5V
SINGLE PULSE
R
θJA
= 350
o
C/W
T
A
= 25
o
C
0.001
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
100ms
10s
1ms
P(pk), PEAK TRANSIENT POWER (W)
5
Figure 8. Capacitance Characteristics.
100us
4
SINGLE PULSE
R
θJA
= 350°C/W
T
A
= 25°C
3
2
1
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
R
θJA
(t) = r(t) * R
θJA
0.2
R
θJA
= 350
o
C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
BSS84 Rev B(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
