2
1
0.5
R
(O
DS
N)
Li
t
mi
2
10
1m
10
10
1s
10
s
DC
0m
ms
s
0u
s
I
D
, DRAIN CURRENT (A)
1
0.5
RD
S(O
N)
Li
t
mi
10
1m
10
10
V
GS
= 20V
SINGLE PULSE
T
A
= 25°C
0u
s
s
I
D
, DRAIN CURRENT (A)
0.2
0.1
0.05
0.2
0.1
0.05
ms
s
0m
s
V
GS
= 20V
SINGLE PULSE
0.01
0.005
1
1s
10
s
DC
T
A
= 25°C
0.01
0.005
5
10
20
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100 150
1
5
10
20
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100 150
Figure 12. BSS100 Maximum Safe
Operating Area.
Figure 13. BSS123 Maximum Safe
Operating Area.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
0.2
0.1
0.05
0 .2
0.1
P(pk)
0.05
R
θJA
(t) = r(t) * R
θJA
o
R
= 200 C/ W
θJA
t
1
0 .0 2
0.01
t
2
0.02
0.01
0.0001
Single Pulse
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 14. BSS100 Transient Thermal Response Curve.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
D = 0.5
0 .2
0.1
0 .05
0 .02
0 .01
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θJA
(t) = r(t) * R
θJA
o
R
= 347 C/ W
θJA
0.01
Single Pulse
t
1
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 15. BSS123 Transient Thermal Response Curve
.
BSS100 Rev. F1 / BSS123 Rev. F1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
