Typical Electrical Characteristics
(continued)
80
50
10
I
D
=220m A
C iss
CAPACITANCE (pF)
20
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
= 5V
8
20
6
C oss
10
5
4
f = 1 MHz
V
GS
= 0V
1
0 .1
0 .2
1
2
5
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 .5
C rss
2
0
50
0
0 .2
0 .4
0 .6
0 .8
1
Q
g
, GATE CHARGE (nC)
1 .2
1 .4
Figure 7. Capacitance Characteristics.
Figure 8. Gate Charge Characteristics.
0 .8
, TRANSCONDUCTANCE (SIEMENS)
V
DS
= 5V
0 .6
T = -55°C
J
25°C
0 .4
125°C
0 .2
g
0
0
0 .1
0 .2
0 .3
0 .4
I
D
, DRAIN CURRENT (A)
0 .5
0 .6
FS
Figure 9. Transconductance Variation with Drain
Current and Temperature.
V
DD
t
d(on)
V
IN
D
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
R
L
V
OUT
DUT
V
GS
V
OUT
R
GEN
10%
10%
INVERTED
G
90%
S
V
IN
10%
50%
50%
PULSE W IDTH
Figure 10. Switching Test Circuit.
Figure 11. Switching Waveforms
.
BSS100 Rev. F1 / BSS123 Rev. F1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
