Typical Electrical Characteristics
BS170 / MMBF170
2
3
V
GS
= 10V
, DRAIN-SOURCE CURRENT (A)
1.5
9.0
8.0
DRAIN-SOURCE ON-RESISTANCE
V
GS
=4.0V
4.5
5.0
6 .0
7.0
6.0
1
R
DS(on)
, NORMALIZED
2.5
2
7.0
1.5
5.0
0.5
8.0
9.0
10
4.0
3.0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5
1
I
0
D
0.5
0
0.4
0.8
1.2
I
D
, DRAIN CURRENT (A)
1.6
2
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
3
V
G S
= 10V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
V
GS
= 10V
2.5
I
D
= 500mA
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
1.5
2
TJ = 125°C
1.25
1.5
25°C
1
1
-55°C
0.5
0.75
0.5
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
0
0.4
0.8
1.2
I
D
, DRAIN CURRENT (A)
1.6
2
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
2
GATE-SOURCE THRESHOLD VOLTAGE
1.1
V
DS
= 10V
1.6
I
D
, DRAIN CURRENT (A)
T J = -55°C
25°C
125°C
V
th
, NORMALIZED
1.05
V
DS
= V
GS
I
D
= 1 mA
1
1.2
0.95
0.8
0.9
0.4
0.85
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
10
0.8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature
.
BS170 Rev. C / MMBF170 Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
