April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
____________
___________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
BS170
60
60
± 20
500
1200
830
6.6
-55 to 150
300
MMBF170
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1M
Ω
)
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
500
800
300
2.4
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistacne, Junction-to-Ambient
150
417
°C/W
© 1997 Fairchild Semiconductor Corporation
BS170 Rev. C / MMBF170 Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
