BDW94/C PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
100k
Figure 2. Collector-Emitter Saturation Voltage
-10
V
CE
= -3V
10k
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
= 250 I
B
h
FE
, DC CURRENT GAIN
-1
1k
100
-0.1
-1
-10
-100
-0.1
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
-20
1000
Figure 4. Output Capacitance
f=1MHz
I
E
=0
V
CE
= -3V
I
C
[A], COLLECTOR CURRENT
-16
-12
C
ob
[pF], CAPACTIANCE
100
-8
-4
-0
-0.0
-0.8
-1.6
-2.4
-3.2
-4.0
10
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Safe Operating Area
-100
Figure 6. Power Derating
120
I
C
[A], COLLECTOR CURRENT
100
I
C
MAX.
-10
5 ms 1 ms
100uS
P
C
[W], POWER DISSIPATION
-1000
80
DC
60
-1
40
BDW94
BDW94A
BDW94B
BDW94C
-0.1
-1
-10
-100
20
0
0
50
o
100
150
200
250
V
CE
[V], COLLECTOR EMITTER VOLTAGE
Tc [ C], CASE TEMPERATURE
3
BDW94/C Rev. B
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FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
