BDW94/C PNP Epitaxial Silicon Transistor
Electrical Characteristics
Symbol
V
CEO(sus)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage
: BDW94
: BDW94C
Collector Cut-off Current
: BDW94
: BDW94C
Conditions
I
C
= -100mA, I
B
= 0
Min.
-45
-100
Typ.
Max
Units
V
V
I
CBO
V
CB
= -45V, I
E
= 0
V
CB
= -100V, I
E
= 0
V
EB
= -45V, I
B
= 0
V
CE
= -100V, I
B
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
F
= -5A
I
F
= -10A
-1.3
-1.8
1000
750
100
-100
-100
-1
-1
-2
20000
-2
-3
-2.5
-4
-2
-4
µA
µA
mA
mA
mA
I
CEO
Collector Cut-off Current
: BDW94
: BDW94C
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain *
V
CE(sat)
V
BE(sat)
V
F
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Parallel Diode Forward Voltage *
V
V
V
V
V
V
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
2
BDW94/C Rev. B
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
