BD243/A/B/C
Typical Characteristics
1000
1.8
V
BE
(sat)(V), SATURATION VOLTAGE
V
CE
= 2V
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
C
= 10.1 I
B
h
FE
, DC CURRENT GAIN
100
10
0.01
0.1
1
10
0.5
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
1
100
V
BE
(sat)(V), SATURATION VOLTAGE
I
C
= 10.1 I
B
I
C
[A], COLLECTOR CURRENT
10
I
C
(max)
10
m
1m
s
10
µ
s
100
µ
s
s
0.1
DC
1
BD243
BD243A
BD243B
BD243C
1
10
100
0.01
0.1
0.1
1
10
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000