BD243/A/B/C
BD243/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD244, BD244A, BD244B and BD244C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD243
: BD243A
: BD243B
: BD243C
V
CEO
Collector-Emitter Voltage
: BD243
: BD243A
: BD243B
: BD243C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
45
60
80
100
45
60
80
100
5
6
10
2
65
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD243
: BD243A
: BD243B
: BD243C
Collector Cut-off Current
Collector Cut-off Current
: BD243/243A
: BD243B/243C
: BD243
: BD243A
: BD243B
: BD243C
Test Condition
I
C
=30mA, I
B
=0
Min.
45
60
80
100
0.7
0.7
0.4
0.4
0.4
0.4
1
30
15
1.5
2
V
V
Typ.
Max.
Units
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
I
CEO
I
CES
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
I
C
= 6A, I
B
= 1A
V
CE
= 4V, I
C
= 6A
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
