BCV27
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
Collector-Cutoff Current
vs Ambient Temperature
100
V
CB
= 30V
BV
CER
- BREAKDOWN VOLTAGE (V)
I
CBO
- COLLE CTOR CURRENT (nA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
62.5
62
61.5
61
60.5
60
59.5
0.1
10
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
100
1000
RESISTANCE (k
Ω
)
Input and Output Capacitance
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
vs Reverse Voltage
f = 1.0 MHz
CAPACITANCE (pF)
20
Gain Bandwidth Product
vs Collector Current
500
V ce = 5V
400
10
300
3
Cib
5
200
Cob
100
2
0.1
1
10
100
0
1
10
20
50
100 150
V
- COLLECTOR VOLTAGE(V)
I
C
- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
350
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
