BCV27
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 100 nA, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
40
10
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, I
B
= 0.1 mA
4,000
10,000
20,000
1.0
1.5
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
C
Current Gain - Bandwidth Product
Collector Capacitance
I
C
= 30 mA, V
CE
= 5.0 V,
f = 100 MHz
V
CB
= 30 V, I
E
= 0, f = 1.0 MHz
220
3.5
MHz
pF
Typical Characteristics
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 5V
200
150
25 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β
= 1000
1.2
- 40 °C
0.8
25°C
125 °C
100
50
0
0.001
- 40 °C
0.4
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
0
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
2
1.6
1.2
0.8
0.4
0
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collect or Current
β
= 1000
- 40 °C
25 °C
125 °C
Base Emitter ON Voltage vs
Collector Current
2
1.6
1.2
125 °C
- 40 °C
25 °C
0.8
0.4
0
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
