BAS16HT1G
Typical Characteristics
Reverse Recovery Time, t
rr
[ns]
(Continued)
4
Ta= 25°C
C u rre n t [m A ]
400
500
400
I
R
-F
3.5
3
OR
WA
R
300
D
CU
R
300
200
RE
NT
2.5
2
I
F
(A V
200
100
1.5
D
100
0
Y
Io - A
V E R A
ST
VERA
G E
AT
GE R
R E C
E
ECTI
T I F
-m
FIE D
I E D
A
CUR
C U
RE N
R
R
T -
EN
mA
T -
)
- A
ST
EA
D
mA
1
10
0
20
30
40
Reverse Current [mA]
50
60
0
0
50
50
100
100
150
150
o
o
A
Ambient Temperature, T
A
[ C]
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
Figure 7. Reverse Recovery Time vs Reverse Current
TRR - IR 10mA vs 60mA
Figure 8. Average Rectified Current (I
F(AV)
) vs
Ambient Temperature (T
A
)
500
Power Dissipation, P
D
[mW]
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
SOD-323 Pkg
0
0
50
100
o
150
200
Average Temperature, I
o
[ C]
Figure 9. Power Derating Curve
©2004 Fairchild Semiconductor Corporation
BAS16HT1G, Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
