BAS16HT1G
Typical Characteristics
150
Reverse Voltage, V
R
[v]
140
130
Reverse Current, I
R
[nA]
Ta= 25°C
300
Ta= 25°C
250
200
150
100
50
0
10
20
30
50
Reverse Voltage, V
R
[v]
70
100
120
R
110
1
2
3
5
10
20 30
Reverse Current, I
R
[uA]
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100µA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100V
Forward Voltage, V
F
[mV]
Forward Voltage, V
F
[mV]
F
485
Ta= 25°C
450
400
350
300
250
225
1
2
3
F
725
Ta= 25°C
700
650
600
550
500
450
0.1
F
5
10
20 30
Forward Current, I
F
[uA]
50
100
0.2 0.3 0.5
1
2
3
Forward Current, I
F
[mA]
5
10
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100µA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
1.5
Forward Voltage, V
F
[V]
1.4
1.2
1
0.8
Total Capacitance, C
T
[pF]
Ta= 25°C
1.3
Ta= 25
°
C
1.2
1.1
F
0.6
10
1
20
30
50
100
200 300
Forward Current, I
F
[mA]
500
0
2
4
6
8
10
Reverse Voltage [V]
12
14
15
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800mA
Figure 6. Total Capacitance
©2004 Fairchild Semiconductor Corporation
BAS16HT1G, Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
