NPN General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.5
0.4
0.3
0.2
0.1
0
250
Vce = 5V
125 °C
25 °C
200
150
100
50
β
= 10
25 °C
125 ºC
- 40 °C
- 40 ºC
0
0.1 0.2
0.5
1
2
5
10 20
50 100
1
10
I C - COLLECTOR CURRENT (mA)
100 200
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
β
= 10
1
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
- 40 ºC
25 °C
125 ºC
125 ºC
V
= 5V
CE
1
10
100
200
0.1
1
10
100 200
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Collector-Cutoff Current
vs. Ambient Temperature
50
10
260
VCB = 100V
I
= 1.0 mA
C
240
220
200
180
160
1
25
50
75
100
125
0.1
1
10
100
1000
TA- AMBIENT TEMPERATURE (ºC)
RESISTANCE (k
)
Ω
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
